DAMASCENE PROCESS INCORPORATED WITH CU-ELECTROPLATING

PURPOSE: A damascene process incorporated with Cu-electroplating is developed to selectively perform prior electroplating process to form metallic plug before producing metallic wiring layer to prevent voids in holes of interlayer dielectric layer. CONSTITUTION: A manufacturing process is performed in stages by forming interlayer dielectric layer (110) on semiconductor substrate (100), patterning desired area of such film to form depressions, forming barrier metal layer (120) on front side of the resulted film having depressions and selectively covering the barrier metal layer with Cu-seed layer (125). The covered film is additionally treated by metallic electroplating process to produce metallic plug (140) filled with the depression. Finally, on the prepared metallic plug metallic wiring work is carried out to produce metal layer having improved electrical property.