METHOD FOR MANUFACTURING PHOTORESIST LAYER PATTERN

PURPOSE: A method for manufacturing a photoresist layer pattern is provided to increase resolution of a pattern size, by performing an exposure to form an exposure portion in a photoresist layer with a reticle having an exposure penetration hole larger than a fine pattern, and by heating the exposure portion higher than a predetermined temperature to decrease a cohesion between polymer and PAC in the photoresist layer. CONSTITUTION: After the surface of a semiconductor substrate(10) is transformed from a hydrophilic property to a hydrophobic property, a photoresist layer is stacked. The photoresist layer is heated by a constant temperature to volatilize solvent. An exposure process, a post exposure bake process and a developing process are performed by using a reticle with an exposure penetration hole increasing a resolution limit to form a photoresist layer pattern(40). The resultant structure is heated higher than a constant temperature to weaken cohesion between PAC and polymer among components of the photoresist layer. The photoresist layer is developed by a constant development rate to form a photoresist layer pattern.