METHOD FOR MANUFACTURING FIELD OXIDATION LAYER OF SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a field oxidation layer of a semiconductor device is provided to uniformly form a narrow field oxidation layer and a broad field oxidation layer without a damage, by forming a high density plasma(HDP) oxidation layer and a tetra ethyl ortho silicate(TEOS) layer to perform a reverse etch process and a chemical mechanical polishing(CMP) planarization process. CONSTITUTION: After an insulating layer(20) is stacked on a semiconductor substrate(10), a trench is formed by a masking etching. A first gap filling oxidation layer is stacked to be buried in the trench. A second gap filling oxidation layer of a predetermined thickness is stacked on the first gap filling oxidation layer. After a reverse etch process is preformed regarding the fist and second gap filling oxidation layers, a field oxidation layer is formed by planarizing the resultant structure by a chemical mechanical polishing(CMP) process.