CHEMICAL MECHANICAL POLISHING APPARATUS

PURPOSE: A chemical mechanical polishing apparatus is provided to prevent a micro scratch phenomenon from being generated by slurry remaining in a plurality holes and in a gap. CONSTITUTION: A chemical mechanical polishing apparatus comprises a polishing pad(140), a wafer carrier(220), a first ring(270), a second ring(280) and a cleaning liquid supplying pipe. The polishing pad contacts the surface of a semiconductor wafer(210) to polish, established to be capable of revolving. In the wafer carrier, the semiconductor wafer is loaded so that the surface of the semiconductor wafer to polish faces a surface direction of the polishing pad. The first ring controls a separation of the semiconductor wafer while revolving together with the wafer and wafer carrier during a polishing process, surrounding the semiconductor wafer and wafer carrier. The second ring has a plurality of holes penetrating outer and inner surfaces, and surrounds the circumference of the first ring at regular intervals, in which the bottom surface fixedly contacts a part of the polishing pad to improve a polishing profile of an edge of the semiconductor wafer. The cleaning liquid supplying pipe is connected to at least one of a plurality of holes of the second ring to supply cleaning liquid into a gap among the holes, first ring and second ring.