SEMICONDUCTOR DEVICE FOR VIA HOLES TO BE BURIED WITH ALUMINUM AND TUNGSTEN

PURPOSE: A fabrication of the semiconductor device of which via holes are buried with aluminum and tungsten is provided by decreasing the resistance value of via contact. CONSTITUTION: A fabrication method of the semiconductor device of which the via holes are buried with aluminum and tungsten consi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AHN, JONG HYEON, SHIN, HYEONG HO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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