SEMICONDUCTOR DEVICE FOR VIA HOLES TO BE BURIED WITH ALUMINUM AND TUNGSTEN

PURPOSE: A fabrication of the semiconductor device of which via holes are buried with aluminum and tungsten is provided by decreasing the resistance value of via contact. CONSTITUTION: A fabrication method of the semiconductor device of which the via holes are buried with aluminum and tungsten consists of: a lower metal layer to be formed on a semiconductor substrate; an inter-layer dielectric having the via holes on the lower metal layer; the first barrier metal layer to be formed at the bottom and the inner wall of the via holes; the second barrier metal layer to be formed at the bottom and the inner wall of the first barrier metal layer; a plug to bury the via holes by being formed at the inner of the second barrier metal layer; and a upper metal layer to be formed on the plug, the first barrier metal layer and the second barrier metal layer.