SEMICONDUCTOR DEVICE WITH PROTECTED BARRIER FOR STACK CELL

PURPOSE: A semiconductor device is provided to enable an integration of component having ferroelectric or paraelectric material and to prevent barrier layer domain of a plug from unwilling oxidation. CONSTITUTION: A semiconductor device for integrated circuits with a stack cell located in an insulat...

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Bibliographische Detailangaben
Hauptverfasser:	MAZURE-ESPEJO CARLOS DR, SCHINDLER GUENTHER DR, HARTNER WALTER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A semiconductor device is provided to enable an integration of component having ferroelectric or paraelectric material and to prevent barrier layer domain of a plug from unwilling oxidation. CONSTITUTION: A semiconductor device for integrated circuits with a stack cell located in an insulating layer(2) having a plug(1) filled contact hole(8) with a capacitor with a lower electrode(5) turned towards the plug(1), a paraelectric or ferroelectric dielectric(6) and an upper electrode(7). A barrier layer(3) is located between the plug(1) and the lower electrode(5). The layer is surrounded by a silicon nitride collar(4) preventing effective oxidation of barrier layer(3).