IMAGE SENSOR HAVING HIGH PHOTO SENSITIVITY

IMAGE SENSOR HAVING HIGH PHOTO SENSITIVITY

PURPOSE: An image sensor is provided to improve the photo sensitivity by improving a transmission rate of a beam inputted to a light receiving element. CONSTITUTION: An oxynitride layer(201) and HSO layer(202) are selectively deposited on an upper portion of a light receiving element(102). Elements...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: WOO, SEON WOONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: An image sensor is provided to improve the photo sensitivity by improving a transmission rate of a beam inputted to a light receiving element. CONSTITUTION: An oxynitride layer(201) and HSO layer(202) are selectively deposited on an upper portion of a light receiving element(102). Elements including the light receiving element(102) are formed on a substrate(101). An insulation layer and a metal wire are formed on the substrate(101). For protecting the elements, an oxide layer(107) is provided. The insulation layer and the oxide layer(107) are selectively etched to expose the light receiving element(102). The oxynitride layer(201) and HSO layer(202) are deposited on the exposed light receiving element(102) and are flattened.