METHOD FOR MANUFACTURING MASK OF SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a mask of a semiconductor device is provided to obtain a vertical profile by performing a dry etch process using an ion implantation method. CONSTITUTION: A method for manufacturing a mask of a semiconductor device comprises the following steps. An opaque layer(7)...

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Bibliographische Detailangaben
Hauptverfasser:	KU, YOUNG MO, KU, SANG SUL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for manufacturing a mask of a semiconductor device is provided to obtain a vertical profile by performing a dry etch process using an ion implantation method. CONSTITUTION: A method for manufacturing a mask of a semiconductor device comprises the following steps. An opaque layer(7) is applied on an upper portion of a quartz substrate(1). A photoresist pattern is formed on an upper portion of the opaque layer. Ions are implanted on a patterning area of the opaque layer. An etch speed of a vertical direction is faster than an etching speed of a horizontal direction when implanting the ions. The opaque layer of a lower portion is etched by using the photoresist pattern as a mask. A photoresist(9) of the upper portion is removed.