METHOD FOR MANUFACTURING PHOTO MASK OF SEMICONDUCTOR DEVICE
PURPOSE: A method for manufacturing a photo mask of a semiconductor is provided to form a pattern of an opaque material and use the formed pattern as a mask. CONSTITUTION: A method for manufacturing a photo mask of a semiconductor comprises the following steps. A transparent thin film with a predete...
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| creator | KU, YOUNG MO HEO, IK BEOM |
| description | PURPOSE: A method for manufacturing a photo mask of a semiconductor is provided to form a pattern of an opaque material and use the formed pattern as a mask. CONSTITUTION: A method for manufacturing a photo mask of a semiconductor comprises the following steps. A transparent thin film with a predetermined thickness is formed on a silicon substrate(1). A resist for protecting the transparent thin film is applied on an upper portion of the transparent thin film. The silicon substrate is polished and removed as much as a predetermined thickness after overturning the silicon substrate. The silicon substrate is overturned after removing the resist. An opaque layer(7) is applied on the upper portion of the transparent thin film. A photoresist pattern is formed on an upper portion of the opaque layer. A lower portion of the exposed opaque layer is etched selectively by using the photoresist pattern as a mask. An upper portion of the photoresist is removed. A predetermined portion of the silicon substrate for penetrating a light is removed. |
| format | Patent |
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CONSTITUTION: A method for manufacturing a photo mask of a semiconductor comprises the following steps. A transparent thin film with a predetermined thickness is formed on a silicon substrate(1). A resist for protecting the transparent thin film is applied on an upper portion of the transparent thin film. The silicon substrate is polished and removed as much as a predetermined thickness after overturning the silicon substrate. The silicon substrate is overturned after removing the resist. An opaque layer(7) is applied on the upper portion of the transparent thin film. A photoresist pattern is formed on an upper portion of the opaque layer. A lower portion of the exposed opaque layer is etched selectively by using the photoresist pattern as a mask. An upper portion of the photoresist is removed. 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CONSTITUTION: A method for manufacturing a photo mask of a semiconductor comprises the following steps. A transparent thin film with a predetermined thickness is formed on a silicon substrate(1). A resist for protecting the transparent thin film is applied on an upper portion of the transparent thin film. The silicon substrate is polished and removed as much as a predetermined thickness after overturning the silicon substrate. The silicon substrate is overturned after removing the resist. An opaque layer(7) is applied on the upper portion of the transparent thin film. A photoresist pattern is formed on an upper portion of the opaque layer. A lower portion of the exposed opaque layer is etched selectively by using the photoresist pattern as a mask. An upper portion of the photoresist is removed. 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CONSTITUTION: A method for manufacturing a photo mask of a semiconductor comprises the following steps. A transparent thin film with a predetermined thickness is formed on a silicon substrate(1). A resist for protecting the transparent thin film is applied on an upper portion of the transparent thin film. The silicon substrate is polished and removed as much as a predetermined thickness after overturning the silicon substrate. The silicon substrate is overturned after removing the resist. An opaque layer(7) is applied on the upper portion of the transparent thin film. A photoresist pattern is formed on an upper portion of the opaque layer. A lower portion of the exposed opaque layer is etched selectively by using the photoresist pattern as a mask. An upper portion of the photoresist is removed. A predetermined portion of the silicon substrate for penetrating a light is removed.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | METHOD FOR MANUFACTURING PHOTO MASK OF SEMICONDUCTOR DEVICE |
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