METHOD FOR MANUFACTURING PHOTO MASK OF SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a photo mask of a semiconductor is provided to form a pattern of an opaque material and use the formed pattern as a mask. CONSTITUTION: A method for manufacturing a photo mask of a semiconductor comprises the following steps. A transparent thin film with a predete...

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Bibliographische Detailangaben
Hauptverfasser: KU, YOUNG MO, HEO, IK BEOM
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE: A method for manufacturing a photo mask of a semiconductor is provided to form a pattern of an opaque material and use the formed pattern as a mask. CONSTITUTION: A method for manufacturing a photo mask of a semiconductor comprises the following steps. A transparent thin film with a predetermined thickness is formed on a silicon substrate(1). A resist for protecting the transparent thin film is applied on an upper portion of the transparent thin film. The silicon substrate is polished and removed as much as a predetermined thickness after overturning the silicon substrate. The silicon substrate is overturned after removing the resist. An opaque layer(7) is applied on the upper portion of the transparent thin film. A photoresist pattern is formed on an upper portion of the opaque layer. A lower portion of the exposed opaque layer is etched selectively by using the photoresist pattern as a mask. An upper portion of the photoresist is removed. A predetermined portion of the silicon substrate for penetrating a light is removed.