HALFTONE PHASE SHIFT MASK FOR PROHIBITING SIDE LOBE

PURPOSE: A halftone phase shift mask is provided to prevent a side lobe in order to increase the productivity of photolithographic process. CONSTITUTION: A halftone phase shift mask for preventing a side lobe consists of a quartz substrate(20), phase shifter patterns disposed on a surface of the qua...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, HYEONG DONG, LEE, SEONG GWON
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A halftone phase shift mask is provided to prevent a side lobe in order to increase the productivity of photolithographic process. CONSTITUTION: A halftone phase shift mask for preventing a side lobe consists of a quartz substrate(20), phase shifter patterns disposed on a surface of the quartz substrate, and chrome patterns(21) inserted in the phase shifter patterns of the side lobe anticipation regions.