FABRICATION METHOD OF SEMICONDUCTOR MEMORY DEVICE

PURPOSE: A method for fabricating a semiconductor memory device is provided to improve characteristic of the device. CONSTITUTION: After isolation layers for defining active regions are formed in a semiconductor substrate, a plug oxide layer is formed on a semiconductor substrate and partly removed....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: IM, SEONG HYEOK
Format: Patent
Sprache:eng ; kor
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!