SEMICONDUCTOR DEVICE AND METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD THEREOF

PURPOSE: A semiconductor device and method thereof are provided to decrease an ON resistance while increasing a breakdown voltage between a source and a drain. CONSTITUTION: A plurality of P-type buried regions(2) are formed at inner of elongated drain region(3). The P-type buried regions(2) are for...

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Hauptverfasser: MORI YOSIHIRO, HIRANO RYUMA, UENO YUJI, HACHIYA YOSIAKI, SOGO SEIJI, TAKAHISI SATORU, YAMANISI YUJI, YAMAGUCHI SEIKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE: A semiconductor device and method thereof are provided to decrease an ON resistance while increasing a breakdown voltage between a source and a drain. CONSTITUTION: A plurality of P-type buried regions(2) are formed at inner of elongated drain region(3). The P-type buried regions(2) are formed by high energy ion implantation or thermal diffusion methods. An N-type heavily doped region(1) is formed at the surface of the elongated drain region(3) and formed by ion implantation or POCl3 diffusion methods. When operating of MOSFET, a drain current is flow in a region(gap region) being not formed the P-type buried region(2), thereby increasing the ON resistance.