POLYSILICON-THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

PURPOSE: A polysilicon-thin film transistor and the manufacturing method are provided to decrease leakage of electric current when the thin film transistor is turned off. CONSTITUTION: The polysilicon-thin film transistor comprises: a substrate(11); a gate insulating film(13) coated on a gate electr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHO, DAE HAN, LEE, GYUNG HA
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!