RC-IGBTREVERSE CONDUCTING INSULATED GATE BIBOLAR TRANSISTOR USING CONCENTRATION DIFFERENCE STRUCTURE

Disclosed is an RC-IGBT using a concentration difference structure. The present invention increases resistance by increasing a moving distance of an electron moving from the RC-IGBT to a cathode layer of a freewheeling diode and increases additional resistance by forming a concentration difference b...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KO JI A, KIM DONG SIK, JUNG JIN YOUNG, RYU HWA JEONG, LEE JONG HUN, SHI SONG LI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Disclosed is an RC-IGBT using a concentration difference structure. The present invention increases resistance by increasing a moving distance of an electron moving from the RC-IGBT to a cathode layer of a freewheeling diode and increases additional resistance by forming a concentration difference between divided field stop layers to increase snapback due to a voltage drop. 농도차 구조를 이용한 RC-IGBT를 개시한다. 본 발명은 RC-IGBT에서 프리휠링 다이오드의 캐소드층으로 이동하는 전자의 이동 거리를 증가시켜 저항성을 높이고, 분할된 필드 스탑층 사이의 농도차를 형성하여 추가 저항성을 증가시켜 전압 강하에 따른 스냅백을 개선할 수 있다.