Photodetectors based on Schottky junction and detecting photolight using the same

A light detection element comprises: a substrate (100); a lower electrode (200) stacked on the substrate; an organic semiconductor layer (300) stacked on the lower electrode (200); and an upper electrode (400) stacked on the organic semiconductor layer (300). A Schottky junction is formed in at leas...

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Bibliographische Detailangaben
Hauptverfasser: KIM HYUNG SUK, YU KYOUNG SIK, JIN YEONG HOON, YOO SEUNG HYUP
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:A light detection element comprises: a substrate (100); a lower electrode (200) stacked on the substrate; an organic semiconductor layer (300) stacked on the lower electrode (200); and an upper electrode (400) stacked on the organic semiconductor layer (300). A Schottky junction is formed in at least one of a junction between an organic semiconductor and the lower electrode and a junction between the organic semiconductor and the upper electrode. 광 검출소자로서, 기판(100); 상기 기판 상에 적층된 하부전극(200); 상기 하부전극(200) 상에 적층된 유기물 반도체층(300); 및 상기 유기물 반도체층(300) 상에 적층된 상부 전극(400)을 포함하며, 상기 유기물 반도체와 상기 하부전극 또는 상기 유기물 반도체와 상기 상부전극간 접합 중 적어도 어느 하나에는 쇼트키 접합이 형성된 것을 특징으로 하는 광 검출소자.