Method for forming anodized film including urushiol
Disclosed is a method for forming an anodized film on a surface of an aluminum member made of a metal including aluminum as a main component. The disclosed method for forming the anodized film comprises: an anodizing step of forming an aluminum member with an anodized film made of an aluminum oxide...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | Disclosed is a method for forming an anodized film on a surface of an aluminum member made of a metal including aluminum as a main component. The disclosed method for forming the anodized film comprises: an anodizing step of forming an aluminum member with an anodized film made of an aluminum oxide on a surface and formed with a plurality of micropores by using a base material made of a metal including aluminum as a main component as an anode in an electrolyte solution and energizing it; and a sealing step of immersing the aluminum member having the anodized film in a urushiol solution at a temperature of 15-50°C to close the plurality of micropores with a material containing urushiol. Therefore, the present invention is capable of allowing for concerns about environmental pollution caused by heavy metal compounds to be washed away.
알루미늄을 주성분으로 포함하는 금속으로 이루어진 알루미늄 부재의 표면에 양극 산화 피막을 형성하는 방법이 개시된다. 개시된 양극 산화 피막 형성 방법은, 알루미늄을 주성분으로 포함하는 금속으로 이루어진 모재를 전해액 내에서 양극으로 하고 통전시켜, 표면에 산화알루미늄으로 이루어지며 다수의 미세공이 형성된 양극 산화 피막을 구비한 알루미늄 부재를 형성하는 양극 산화 단계, 및 양극 산화 피막을 구비한 알루미늄 부재를 15 내지 50℃ 온도의 우루시올 용액에 침잠시켜 다수의 미세공을 우루시올을 포함하는 물질로 폐쇄하는 봉공 처리 단계를 구비한다. |
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