Elimination and treatment method of Arsenic compound in hydrogen fluoride for manufacturing of ultra-high-purity hydrogen fluoride

The present invention relates to an elimination and treatment method of an arsenic compound in hydrogen fluoride during manufacture of ultra-high-purity hydrogen fluoride, which comprises: a first step of introducing natural-hydrofluoric acid (crude-AHF) containing AsF_3 and F_2 gas as an oxidizing...

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Hauptverfasser: JOUNG SOON KILL, MOON JUNG HEUN, WOO BYUNG WON, AHN HYEON GEUN, KIM DONG HYUN
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MOON JUNG HEUN
WOO BYUNG WON
AHN HYEON GEUN
KIM DONG HYUN
description The present invention relates to an elimination and treatment method of an arsenic compound in hydrogen fluoride during manufacture of ultra-high-purity hydrogen fluoride, which comprises: a first step of introducing natural-hydrofluoric acid (crude-AHF) containing AsF_3 and F_2 gas as an oxidizing agent into a reactor; a second step of producing AsF_5 gas by an oxidation reaction of the AsF_ 3 and F_2 gas; a third step of forming an XAsF_x(OH)_y compound (X is one selected from Na, K, Li, Ca, and Ba, x is 5-7 and y is 0 or 1) by reacting the produced AsF_5 gas with an absorption liquid; and a fourth step of discharging the AsF_5 gas that did not react with the absorption liquid in the third step to the atmosphere. According to the present invention, by using a method of maximizing a contact time to increase a conversion rate during oxidation of AsF_3 using F_2 gas, the arsenic compound in the hydrogen fluoride can be removed with high efficiency when producing the ultra-high-purity hydrogen fluoride, and a gaseous arsenic compound generated during a manufacturing process can be effectively treated. 본 발명은 AsF3를 포함하는 천연-무수 불산(Crude-AHF)과 산화제인 F2 가스를 반응기에 투입하는 제1단계, 상기 AsF3 와 F2 가스의 산화반응으로 AsF5 가스를 제조하는 제2단계, 상기 제조된 AsF5 가스와 흡수액을 반응시켜 XAsFx(OH)y(X = Na, K, Li, Ca, Ba 중에서 선택되며; x = 5 ~ 7; y = 0 또는 1임) 화합물을 형성시키는 제3단계, 및 상기 제3단계에서 흡수액과 반응하지 않은 AsF5 가스를 대기로 배출시키는 제4단계를 포함하는 초고순도 불화수소가스 제조 시 불화수소 내 비소화합물의 제거 및 처리방법에 관한 것으로, 본 발명에 따르면, F2 가스를 이용하여 AsF3의 산화 시 전환율을 높이기 위하여 접촉시간을 극대화시키는 방법을 이용하여, 초고순도 불화수소 제조 시 높은 효율로 불화수소 내 비소화합물을 제거할 수 있고, 제조 공정 중 발생하는 기상의 비소화합물을 효과적으로 처리할 수 있는 방법을 제공할 수 있다.
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According to the present invention, by using a method of maximizing a contact time to increase a conversion rate during oxidation of AsF_3 using F_2 gas, the arsenic compound in the hydrogen fluoride can be removed with high efficiency when producing the ultra-high-purity hydrogen fluoride, and a gaseous arsenic compound generated during a manufacturing process can be effectively treated. 본 발명은 AsF3를 포함하는 천연-무수 불산(Crude-AHF)과 산화제인 F2 가스를 반응기에 투입하는 제1단계, 상기 AsF3 와 F2 가스의 산화반응으로 AsF5 가스를 제조하는 제2단계, 상기 제조된 AsF5 가스와 흡수액을 반응시켜 XAsFx(OH)y(X = Na, K, Li, Ca, Ba 중에서 선택되며; x = 5 ~ 7; y = 0 또는 1임) 화합물을 형성시키는 제3단계, 및 상기 제3단계에서 흡수액과 반응하지 않은 AsF5 가스를 대기로 배출시키는 제4단계를 포함하는 초고순도 불화수소가스 제조 시 불화수소 내 비소화합물의 제거 및 처리방법에 관한 것으로, 본 발명에 따르면, F2 가스를 이용하여 AsF3의 산화 시 전환율을 높이기 위하여 접촉시간을 극대화시키는 방법을 이용하여, 초고순도 불화수소 제조 시 높은 효율로 불화수소 내 비소화합물을 제거할 수 있고, 제조 공정 중 발생하는 기상의 비소화합물을 효과적으로 처리할 수 있는 방법을 제공할 수 있다.</description><language>eng ; kor</language><subject>CHEMISTRY ; COMPOUNDS THEREOF ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210527&amp;DB=EPODOC&amp;CC=KR&amp;NR=102256840B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210527&amp;DB=EPODOC&amp;CC=KR&amp;NR=102256840B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOUNG SOON KILL</creatorcontrib><creatorcontrib>MOON JUNG HEUN</creatorcontrib><creatorcontrib>WOO BYUNG WON</creatorcontrib><creatorcontrib>AHN HYEON GEUN</creatorcontrib><creatorcontrib>KIM DONG HYUN</creatorcontrib><title>Elimination and treatment method of Arsenic compound in hydrogen fluoride for manufacturing of ultra-high-purity hydrogen fluoride</title><description>The present invention relates to an elimination and treatment method of an arsenic compound in hydrogen fluoride during manufacture of ultra-high-purity hydrogen fluoride, which comprises: a first step of introducing natural-hydrofluoric acid (crude-AHF) containing AsF_3 and F_2 gas as an oxidizing agent into a reactor; a second step of producing AsF_5 gas by an oxidation reaction of the AsF_ 3 and F_2 gas; a third step of forming an XAsF_x(OH)_y compound (X is one selected from Na, K, Li, Ca, and Ba, x is 5-7 and y is 0 or 1) by reacting the produced AsF_5 gas with an absorption liquid; and a fourth step of discharging the AsF_5 gas that did not react with the absorption liquid in the third step to the atmosphere. According to the present invention, by using a method of maximizing a contact time to increase a conversion rate during oxidation of AsF_3 using F_2 gas, the arsenic compound in the hydrogen fluoride can be removed with high efficiency when producing the ultra-high-purity hydrogen fluoride, and a gaseous arsenic compound generated during a manufacturing process can be effectively treated. 본 발명은 AsF3를 포함하는 천연-무수 불산(Crude-AHF)과 산화제인 F2 가스를 반응기에 투입하는 제1단계, 상기 AsF3 와 F2 가스의 산화반응으로 AsF5 가스를 제조하는 제2단계, 상기 제조된 AsF5 가스와 흡수액을 반응시켜 XAsFx(OH)y(X = Na, K, Li, Ca, Ba 중에서 선택되며; x = 5 ~ 7; y = 0 또는 1임) 화합물을 형성시키는 제3단계, 및 상기 제3단계에서 흡수액과 반응하지 않은 AsF5 가스를 대기로 배출시키는 제4단계를 포함하는 초고순도 불화수소가스 제조 시 불화수소 내 비소화합물의 제거 및 처리방법에 관한 것으로, 본 발명에 따르면, F2 가스를 이용하여 AsF3의 산화 시 전환율을 높이기 위하여 접촉시간을 극대화시키는 방법을 이용하여, 초고순도 불화수소 제조 시 높은 효율로 불화수소 내 비소화합물을 제거할 수 있고, 제조 공정 중 발생하는 기상의 비소화합물을 효과적으로 처리할 수 있는 방법을 제공할 수 있다.</description><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNiz0LwjAQQLs4iPofDpwLbf3A1UpFcBP3EpJLE2juSnoZuvrLreDm4vTg8d4yezW9D56UeCZQZEAiKglIAgHFsQG2cI4jktegOQyc5sgTuMlE7pDA9omjNwiWIwRFySotKXrqPmvqJarc-c7lwyxl-h3X2cKqfsTNl6tse22el1uOA7c4DkojobT3R1lU1eF42hd1Xe7-q96G5Uvv</recordid><startdate>20210527</startdate><enddate>20210527</enddate><creator>JOUNG SOON KILL</creator><creator>MOON JUNG HEUN</creator><creator>WOO BYUNG WON</creator><creator>AHN HYEON GEUN</creator><creator>KIM DONG HYUN</creator><scope>EVB</scope></search><sort><creationdate>20210527</creationdate><title>Elimination and treatment method of Arsenic compound in hydrogen fluoride for manufacturing of ultra-high-purity hydrogen fluoride</title><author>JOUNG SOON KILL ; MOON JUNG HEUN ; WOO BYUNG WON ; AHN HYEON GEUN ; KIM DONG HYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR102256840BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>JOUNG SOON KILL</creatorcontrib><creatorcontrib>MOON JUNG HEUN</creatorcontrib><creatorcontrib>WOO BYUNG WON</creatorcontrib><creatorcontrib>AHN HYEON GEUN</creatorcontrib><creatorcontrib>KIM DONG HYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOUNG SOON KILL</au><au>MOON JUNG HEUN</au><au>WOO BYUNG WON</au><au>AHN HYEON GEUN</au><au>KIM DONG HYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Elimination and treatment method of Arsenic compound in hydrogen fluoride for manufacturing of ultra-high-purity hydrogen fluoride</title><date>2021-05-27</date><risdate>2021</risdate><abstract>The present invention relates to an elimination and treatment method of an arsenic compound in hydrogen fluoride during manufacture of ultra-high-purity hydrogen fluoride, which comprises: a first step of introducing natural-hydrofluoric acid (crude-AHF) containing AsF_3 and F_2 gas as an oxidizing agent into a reactor; a second step of producing AsF_5 gas by an oxidation reaction of the AsF_ 3 and F_2 gas; a third step of forming an XAsF_x(OH)_y compound (X is one selected from Na, K, Li, Ca, and Ba, x is 5-7 and y is 0 or 1) by reacting the produced AsF_5 gas with an absorption liquid; and a fourth step of discharging the AsF_5 gas that did not react with the absorption liquid in the third step to the atmosphere. According to the present invention, by using a method of maximizing a contact time to increase a conversion rate during oxidation of AsF_3 using F_2 gas, the arsenic compound in the hydrogen fluoride can be removed with high efficiency when producing the ultra-high-purity hydrogen fluoride, and a gaseous arsenic compound generated during a manufacturing process can be effectively treated. 본 발명은 AsF3를 포함하는 천연-무수 불산(Crude-AHF)과 산화제인 F2 가스를 반응기에 투입하는 제1단계, 상기 AsF3 와 F2 가스의 산화반응으로 AsF5 가스를 제조하는 제2단계, 상기 제조된 AsF5 가스와 흡수액을 반응시켜 XAsFx(OH)y(X = Na, K, Li, Ca, Ba 중에서 선택되며; x = 5 ~ 7; y = 0 또는 1임) 화합물을 형성시키는 제3단계, 및 상기 제3단계에서 흡수액과 반응하지 않은 AsF5 가스를 대기로 배출시키는 제4단계를 포함하는 초고순도 불화수소가스 제조 시 불화수소 내 비소화합물의 제거 및 처리방법에 관한 것으로, 본 발명에 따르면, F2 가스를 이용하여 AsF3의 산화 시 전환율을 높이기 위하여 접촉시간을 극대화시키는 방법을 이용하여, 초고순도 불화수소 제조 시 높은 효율로 불화수소 내 비소화합물을 제거할 수 있고, 제조 공정 중 발생하는 기상의 비소화합물을 효과적으로 처리할 수 있는 방법을 제공할 수 있다.</abstract><oa>free_for_read</oa></addata></record>
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COMPOUNDS THEREOF
INORGANIC CHEMISTRY
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NON-METALLIC ELEMENTS
title Elimination and treatment method of Arsenic compound in hydrogen fluoride for manufacturing of ultra-high-purity hydrogen fluoride
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