METHOD OF MANUFACTURING PEROVSKITE THIN FILM CONTAINING TIN AND PHOTOELECTRIC DEVICE HAVING THE PEROVSKITE THIN FILM
Disclosed is a method of manufacturing a perovskite thin film, capable of manufacturing a tin-containing perovskite thin film having excellent quality. The method of manufacturing the perovskite thin film includes: forming a (divalent) metal chalcogenide thin film on a substrate; forming a prelimina...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LEE SANG WOOK HEO JAE YEONG YUN YEONG HUN CHO JAE YU |
| description | Disclosed is a method of manufacturing a perovskite thin film, capable of manufacturing a tin-containing perovskite thin film having excellent quality. The method of manufacturing the perovskite thin film includes: forming a (divalent) metal chalcogenide thin film on a substrate; forming a preliminary thin film by applying a precursor solution of chemical formula 1 or 2 on the (divalent) metal chalcogenide thin film; and converting the preliminary thin film into a perovskite thin film having a composition represented by chemical formula 3 by thermally treating the preliminary thin film. The chemical formula 1 is represented by AX, the chemical formula 2 is represented by AM^2X_3, and the chemical formula 3 is represented by AM(_x)(^1)M_(1-x)(^2)X_3. In the chemical formulas 1 to 3, A represents a monovalent organic cation or a monovalent metal cation, M^1 represents a first metal, M^1 and M^2 represent mutually different divalent metal cations, X represents a halogen anion, and x is a real number which is greater than 0 and less than or equal to 1.
페로브스카이트 박막의 제조방법이 개시된다. 페로브스카이트 박막의 제조방법은 기판 상에 금속(+2가) 칼코겐화물 박막을 형성하는 단계, 금속(+2가) 칼코겐화물 박막 상에 하기 화학식 1 또는 화학식 2의 전구체 용액을 도포하여 예비 박막을 형성하는 단계 및 예비 박막을 열처리하여 하기 화학식 3의 조성을 갖는 페로브스카이트 박막으로 변환시키는 단계를 구비한다. [화학식 1][화학식 2][화학식 3]상기 화학식 1 내지 3에서, A는 +1가의 유기 양이온 또는 +1가의 금속 양이온을 나타내고, M은 상기 제1 금속을 나타내고, M및 M는 각각 서로 다른 +2가의 금속 양이온을 나타내고, X는 할로겐 음이온을 나타내며, x는 0 초과 1 이하의 실수일 수 있다. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR102135698BB1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR102135698BB1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR102135698BB13</originalsourceid><addsrcrecordid>eNqNjL0KwjAURrM4iPoOF5wFa1HqmCY35tI2KfG2aykSJ9FC-_74g6OD0wfnHL65mCpk6zV4A5V0jZGKm0DuBDUG354LYgS25MBQWYHyjiW5t-cXk05DbT17LFFxIAUaW1IIVrafxuLPn6WYXfvbGFffXYi1QVZ2E4dHF8ehv8R7nLoiJNtdku4PxyzPk_S_6gmw9ToI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING PEROVSKITE THIN FILM CONTAINING TIN AND PHOTOELECTRIC DEVICE HAVING THE PEROVSKITE THIN FILM</title><source>esp@cenet</source><creator>LEE SANG WOOK ; HEO JAE YEONG ; YUN YEONG HUN ; CHO JAE YU</creator><creatorcontrib>LEE SANG WOOK ; HEO JAE YEONG ; YUN YEONG HUN ; CHO JAE YU</creatorcontrib><description>Disclosed is a method of manufacturing a perovskite thin film, capable of manufacturing a tin-containing perovskite thin film having excellent quality. The method of manufacturing the perovskite thin film includes: forming a (divalent) metal chalcogenide thin film on a substrate; forming a preliminary thin film by applying a precursor solution of chemical formula 1 or 2 on the (divalent) metal chalcogenide thin film; and converting the preliminary thin film into a perovskite thin film having a composition represented by chemical formula 3 by thermally treating the preliminary thin film. The chemical formula 1 is represented by AX, the chemical formula 2 is represented by AM^2X_3, and the chemical formula 3 is represented by AM(_x)(^1)M_(1-x)(^2)X_3. In the chemical formulas 1 to 3, A represents a monovalent organic cation or a monovalent metal cation, M^1 represents a first metal, M^1 and M^2 represent mutually different divalent metal cations, X represents a halogen anion, and x is a real number which is greater than 0 and less than or equal to 1.
페로브스카이트 박막의 제조방법이 개시된다. 페로브스카이트 박막의 제조방법은 기판 상에 금속(+2가) 칼코겐화물 박막을 형성하는 단계, 금속(+2가) 칼코겐화물 박막 상에 하기 화학식 1 또는 화학식 2의 전구체 용액을 도포하여 예비 박막을 형성하는 단계 및 예비 박막을 열처리하여 하기 화학식 3의 조성을 갖는 페로브스카이트 박막으로 변환시키는 단계를 구비한다. [화학식 1][화학식 2][화학식 3]상기 화학식 1 내지 3에서, A는 +1가의 유기 양이온 또는 +1가의 금속 양이온을 나타내고, M은 상기 제1 금속을 나타내고, M및 M는 각각 서로 다른 +2가의 금속 양이온을 나타내고, X는 할로겐 음이온을 나타내며, x는 0 초과 1 이하의 실수일 수 있다.</description><language>eng ; kor</language><subject>ELECTRICITY</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200826&DB=EPODOC&CC=KR&NR=102135698B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200826&DB=EPODOC&CC=KR&NR=102135698B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE SANG WOOK</creatorcontrib><creatorcontrib>HEO JAE YEONG</creatorcontrib><creatorcontrib>YUN YEONG HUN</creatorcontrib><creatorcontrib>CHO JAE YU</creatorcontrib><title>METHOD OF MANUFACTURING PEROVSKITE THIN FILM CONTAINING TIN AND PHOTOELECTRIC DEVICE HAVING THE PEROVSKITE THIN FILM</title><description>Disclosed is a method of manufacturing a perovskite thin film, capable of manufacturing a tin-containing perovskite thin film having excellent quality. The method of manufacturing the perovskite thin film includes: forming a (divalent) metal chalcogenide thin film on a substrate; forming a preliminary thin film by applying a precursor solution of chemical formula 1 or 2 on the (divalent) metal chalcogenide thin film; and converting the preliminary thin film into a perovskite thin film having a composition represented by chemical formula 3 by thermally treating the preliminary thin film. The chemical formula 1 is represented by AX, the chemical formula 2 is represented by AM^2X_3, and the chemical formula 3 is represented by AM(_x)(^1)M_(1-x)(^2)X_3. In the chemical formulas 1 to 3, A represents a monovalent organic cation or a monovalent metal cation, M^1 represents a first metal, M^1 and M^2 represent mutually different divalent metal cations, X represents a halogen anion, and x is a real number which is greater than 0 and less than or equal to 1.
페로브스카이트 박막의 제조방법이 개시된다. 페로브스카이트 박막의 제조방법은 기판 상에 금속(+2가) 칼코겐화물 박막을 형성하는 단계, 금속(+2가) 칼코겐화물 박막 상에 하기 화학식 1 또는 화학식 2의 전구체 용액을 도포하여 예비 박막을 형성하는 단계 및 예비 박막을 열처리하여 하기 화학식 3의 조성을 갖는 페로브스카이트 박막으로 변환시키는 단계를 구비한다. [화학식 1][화학식 2][화학식 3]상기 화학식 1 내지 3에서, A는 +1가의 유기 양이온 또는 +1가의 금속 양이온을 나타내고, M은 상기 제1 금속을 나타내고, M및 M는 각각 서로 다른 +2가의 금속 양이온을 나타내고, X는 할로겐 음이온을 나타내며, x는 0 초과 1 이하의 실수일 수 있다.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL0KwjAURrM4iPoOF5wFa1HqmCY35tI2KfG2aykSJ9FC-_74g6OD0wfnHL65mCpk6zV4A5V0jZGKm0DuBDUG354LYgS25MBQWYHyjiW5t-cXk05DbT17LFFxIAUaW1IIVrafxuLPn6WYXfvbGFffXYi1QVZ2E4dHF8ehv8R7nLoiJNtdku4PxyzPk_S_6gmw9ToI</recordid><startdate>20200826</startdate><enddate>20200826</enddate><creator>LEE SANG WOOK</creator><creator>HEO JAE YEONG</creator><creator>YUN YEONG HUN</creator><creator>CHO JAE YU</creator><scope>EVB</scope></search><sort><creationdate>20200826</creationdate><title>METHOD OF MANUFACTURING PEROVSKITE THIN FILM CONTAINING TIN AND PHOTOELECTRIC DEVICE HAVING THE PEROVSKITE THIN FILM</title><author>LEE SANG WOOK ; HEO JAE YEONG ; YUN YEONG HUN ; CHO JAE YU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR102135698BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE SANG WOOK</creatorcontrib><creatorcontrib>HEO JAE YEONG</creatorcontrib><creatorcontrib>YUN YEONG HUN</creatorcontrib><creatorcontrib>CHO JAE YU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE SANG WOOK</au><au>HEO JAE YEONG</au><au>YUN YEONG HUN</au><au>CHO JAE YU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING PEROVSKITE THIN FILM CONTAINING TIN AND PHOTOELECTRIC DEVICE HAVING THE PEROVSKITE THIN FILM</title><date>2020-08-26</date><risdate>2020</risdate><abstract>Disclosed is a method of manufacturing a perovskite thin film, capable of manufacturing a tin-containing perovskite thin film having excellent quality. The method of manufacturing the perovskite thin film includes: forming a (divalent) metal chalcogenide thin film on a substrate; forming a preliminary thin film by applying a precursor solution of chemical formula 1 or 2 on the (divalent) metal chalcogenide thin film; and converting the preliminary thin film into a perovskite thin film having a composition represented by chemical formula 3 by thermally treating the preliminary thin film. The chemical formula 1 is represented by AX, the chemical formula 2 is represented by AM^2X_3, and the chemical formula 3 is represented by AM(_x)(^1)M_(1-x)(^2)X_3. In the chemical formulas 1 to 3, A represents a monovalent organic cation or a monovalent metal cation, M^1 represents a first metal, M^1 and M^2 represent mutually different divalent metal cations, X represents a halogen anion, and x is a real number which is greater than 0 and less than or equal to 1.
페로브스카이트 박막의 제조방법이 개시된다. 페로브스카이트 박막의 제조방법은 기판 상에 금속(+2가) 칼코겐화물 박막을 형성하는 단계, 금속(+2가) 칼코겐화물 박막 상에 하기 화학식 1 또는 화학식 2의 전구체 용액을 도포하여 예비 박막을 형성하는 단계 및 예비 박막을 열처리하여 하기 화학식 3의 조성을 갖는 페로브스카이트 박막으로 변환시키는 단계를 구비한다. [화학식 1][화학식 2][화학식 3]상기 화학식 1 내지 3에서, A는 +1가의 유기 양이온 또는 +1가의 금속 양이온을 나타내고, M은 상기 제1 금속을 나타내고, M및 M는 각각 서로 다른 +2가의 금속 양이온을 나타내고, X는 할로겐 음이온을 나타내며, x는 0 초과 1 이하의 실수일 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR102135698BB1 |
| source | esp@cenet |
| subjects | ELECTRICITY |
| title | METHOD OF MANUFACTURING PEROVSKITE THIN FILM CONTAINING TIN AND PHOTOELECTRIC DEVICE HAVING THE PEROVSKITE THIN FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T09%3A21%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEE%20SANG%20WOOK&rft.date=2020-08-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR102135698BB1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |