Etching Solution and Method for OMO Transparent Electrode

Etching Solution and Method for OMO Transparent Electrode

The object of the present invention is to provide an etchant capable of etching the entire OMO layer at a time so that an OMO pattern can be patterned by one etching at the time of forming the OMO pattern. According to the above object, the present invention provides the etchant capable of etching t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JONG SUN PARK, KIM, YEONG SHIN, SUNG MIN WIE, JUNG WOO PARK, HWANG YONG OON, TAE SIK KONG, GYEONG DEOK MO, WOO HYUN HWANG
Format: Patent
Sprache:eng ; kor
Schlagworte:
ADHESIVES
CHEMISTRY
DYES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The object of the present invention is to provide an etchant capable of etching the entire OMO layer at a time so that an OMO pattern can be patterned by one etching at the time of forming the OMO pattern. According to the above object, the present invention provides the etchant capable of etching the entire OMO layer at one time, wherein the etchant is a mixture of hydrofluoric acid, nitric acid, and ultrapure water. The volume ratio of hydrofluoric acid : nitric acid : ultrapure water is 1 : 500 to 1500 : 1500 to 2500. The OMO pattern formation is completed by a single etching process using the etchant. 본 발명의 목적은 한 번에 OMO층 전체를 식각할 수 있는 식각액을 제공하여 OMO 패턴 형성 시 한 번의 식각으로 패턴을 형성할 수 있게 하는 것이다. 상기 목적에 따라 본 발명은, OMO층 전체를 한번에 식각할 수 있는 식각액으로서, 불산, 질산 및 초순수를 혼합한 식각액을 제공하였다. 상기에서 불산: 질산: 초순수의 부피비는 1: 500~1500: 1500~2500으로 한다. OMO 패턴 형성은 상기 식각액을 이용하여 한번의 식각공정으로 완료된다.