Etchant composition with high selectivity to silicon nitride

The present invention relates to an etching composition for a silicon nitride film. The present invention relates to a high-selectivity etching composition for use in silicon nitride films for semiconductor fabrication, which is used to etch and remove silicon nitride films in semiconductor processe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM BYEOUNG TAK, LEE SOK HO, JO SUNG IL, HAN NA, LEE MIN KEUN, LIM AH HYEON, JEON SEONG SIK, KIM JOON WON, SONG JUNG HWAN, LEE JUN WOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES CHEMISTRY DYES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES
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