POWER AMPLIFIER
The present invention relates to a power amplifier which improves linearity of a common gate transistor thereof. The power amplifier comprises: a common gate transistor including a drain, a source, a gate, and a body; a body resistor connected between the drain and the body; a diode formed between t...
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| Hauptverfasser: | , , |
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a power amplifier which improves linearity of a common gate transistor thereof. The power amplifier comprises: a common gate transistor including a drain, a source, a gate, and a body; a body resistor connected between the drain and the body; a diode formed between the body and the source; and a common source transistor coupled to the source of the common gate transistor to receive an input signal.
드레인, 소스, 게이트 및 바디를 포함하는 공통 게이트 트랜지스터, 드레인과 바디 사이에 연결되는 바디 저항, 바디와 소스 사이에 형성되는 다이오드 및 공통 게이트 트랜지스터의 소스와 연결되어 입력 신호를 수신하는 공통 소스 트랜지스터를 포함하는 전력 증폭기. |
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