MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR MATERIAL

The present invention relates to a method for manufacturing a nitride semiconductor material. The present invention provides the method for manufacturing a nitride semiconductor material, which includes the steps of: arranging a substrate in a chamber; and injecting vapor materials including boron a...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, JAE WON, KIM, DONG YEONG, JEONG, HO KYEONG, HAN, NAM, KIM, JONG KYU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a method for manufacturing a nitride semiconductor material. The present invention provides the method for manufacturing a nitride semiconductor material, which includes the steps of: arranging a substrate in a chamber; and injecting vapor materials including boron and nitride, respectively, into the chamber and forming hexagonal boron nitride of a two-dimensional layered structure on the substrate by using a chemical reaction according to a process condition set for forming a nitrogen vacancy. Accordingly, the present invention can control the electrical conductivity of the hexagonal boron nitride to improve the degree of freedom in design. 본 발명은 질화물 반도체 물질의 제조 방법에 관한 것이다. 본 발명은 챔버 내에 기판을 배치하는 단계, 및 챔버 내에 붕소 및 질소를 각각 포함하는 기상물질들을 주입하고, 질소 공극 형성을 위해 설정된 공정 조건에 따라 화학 반응을 이용하여 기판 상에 이차원 층상 구조의 육방정 질화붕소를 형성하는 단계를 포함하는 질화물 반도체 물질의 제조 방법을 제공한다.