ATOMIC LAYER DEPOSITION OF PLATINUM GROUP METAL THIN FILMS

Disclosed is an atomic layer deposition method of a platinum group metal thin film. The atomic layer deposition method of a platinum group metal thin film comprises: a step of preprocessing H_2S or NH_3 on a substrate; and a step of forming a platinum group metal thin film on the substrate. As such,...

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Bibliographische Detailangaben
Hauptverfasser: JEONG, DOO SEOK, BAEK, SEUNG HYUB, KIM, SEONG KEUN, KWON, BEOM JIN, PYEON, JUNG JOON, CHOI, JI WON, KIM, JIN SANG, KANG, CHONG YUN
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:Disclosed is an atomic layer deposition method of a platinum group metal thin film. The atomic layer deposition method of a platinum group metal thin film comprises: a step of preprocessing H_2S or NH_3 on a substrate; and a step of forming a platinum group metal thin film on the substrate. As such, the present invention enables a continuous deposition of the thin film by controlling a size and distribution of platinum group nanoparticles. 본 발명은 HS 또는 NH를 기판상에 전처리하는 단계 및 상기 기판 상에 백금족 박막을 형성하는 단계를 포함하는 것을 특징으로 하는 백금족 박막의 원자층 증착방법을 개시한다.