METHOD OF MANUFACTURING GALLIUM OXIDE FOR OXIDE SEMICONDUCTOR THROUGH WET RECYCLING OF INDIUM, GALLIUM, ZINC OXIDE TARGET

The present invention relates to a method for collecting a high purity gallium oxide by extracting indium and gallium contained in a waste target and a scrap for an oxide semiconductor and, more specifically, to a novel method for manufacturing a high purity gallium oxide, which can separate indium...

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Bibliographische Detailangaben
Hauptverfasser:	CHANG, JEE YOUNG, YANG, SEUNG HO, YOON, WON KYU, AHN, WOO SUNG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a method for collecting a high purity gallium oxide by extracting indium and gallium contained in a waste target and a scrap for an oxide semiconductor and, more specifically, to a novel method for manufacturing a high purity gallium oxide, which can separate indium in a hydroxide form through alkaline reduction after dissolving an IGZO target scrap in acid, and can be applied to a target material for an oxide semiconductor through a purifying process after separating gallium with pH regulation of the remaining filtrate through acid.