NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Provided is a method for manufacturing a non-volatile memory device, comprising the steps of: preparing a substrate; forming an insulation film on the substrate; forming a tunnel film through passivation of the insulation film by sulfur (S); forming a charge trap film on the tunnel; and forming a ga...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SEONG, SE JONG, PARK, IN SUNG, AHN, JIN HO, JUNG, YONG CHAN, LEE, MYUNG WAN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a method for manufacturing a non-volatile memory device, comprising the steps of: preparing a substrate; forming an insulation film on the substrate; forming a tunnel film through passivation of the insulation film by sulfur (S); forming a charge trap film on the tunnel; and forming a gate conductive film on the charge trap film. 비휘발성 메모리 소자의 제조 방법이 제공된다. 상기 비휘발성 메모리 소자의 제조 방법은, 기판을 준비하는 단계, 상기 기판 상에 절연막을 형성하는 단계, 상기 절연막을 황(S)으로 페시베이션(passivation)하여, 터널막을 형성하는 단계, 상기 터널막 상에 전하 트랩막을 형성하는 단계, 및 상기 전하 트랩막 상에 게이트 도전막을 형성하는 단계를 포함할 수 있다.