MULTI-OXIDE LAYER FOR CONTROLLING NEGATIVELY FIXED OXIDE CHARGE DENSITY, METHOD FOR FORMING THE THE MULTI-OXIDE LAYER AND A SEMICONDUCTOR DEVICE USING THE MULTI-OXIDE LAYER AND METHOD FOR FORMING THEREOF

MULTI-OXIDE LAYER FOR CONTROLLING NEGATIVELY FIXED OXIDE CHARGE DENSITY, METHOD FOR FORMING THE THE MULTI-OXIDE LAYER AND A SEMICONDUCTOR DEVICE USING THE MULTI-OXIDE LAYER AND METHOD FOR FORMING THEREOF

Provided is a multi-oxide layer for controlling negatively fixed oxide charge density. The multi-oxide layer includes: a first aluminum oxide film, a second aluminum oxide film, and a silicon oxide film inserted between them. The present invention makes features of the first aluminum oxide film on a...

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Bibliographische Detailangaben
Hauptverfasser: LI MENG, OH, SUNG KWEN, LEE, HO RYEONG, LEE, HI DEOK, JEONG, KWANG SEOK
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a multi-oxide layer for controlling negatively fixed oxide charge density. The multi-oxide layer includes: a first aluminum oxide film, a second aluminum oxide film, and a silicon oxide film inserted between them. The present invention makes features of the first aluminum oxide film on a semiconductor substrate, the silicon oxide film formed on the first aluminum oxide film, and the second aluminum oxide film formed on the silicon oxide film. 음의 고정 산화막 전하 밀도 제어를 위한 다층 산화막이 제공된다. 다층 산화막은 제1 알루미늄 산화막 및 제2 알루미늄 산화막 그리고 이들 사이에 삽입된 실리콘 산화막을 포함한다.