METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM
The present invention relates to a method to form a silicon film and, more specifically, relates to a method to form the silicon film including a pre-processing step in a process to form silicon film. According to an embodiment of the present invention, the method to form the silicon film includes:...
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| creator | PARK, SEONG JIN KIM, KI HO LEE, KANG WOOK CHOI, HO MIN KWON, HYEOK YONG JUNG, WOO DUCK OH, WAN SUK SHIN, SEUNG WOO CHO, SUNG KIL LEE, KOON WOO |
| description | The present invention relates to a method to form a silicon film and, more specifically, relates to a method to form the silicon film including a pre-processing step in a process to form silicon film. According to an embodiment of the present invention, the method to form the silicon film includes: the pre-processing step dropping pre-processing gas including one or more elements among N, C, O, and B before a heat treatment when forming a polysilicon film by heat-treating an amorphous silicon film deposited on a base. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR101507381BB1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR101507381BB1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR101507381BB13</originalsourceid><addsrcrecordid>eNrjZND3dQ3x8HdRcPMPAmFfTz93hQB_n0jnoMjgEEcfH08_V4VgTx9PZ38_BTdPH18eBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhLvHWRoYGhqYG5sYejkZGhMnCoAubInLw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM</title><source>esp@cenet</source><creator>PARK, SEONG JIN ; KIM, KI HO ; LEE, KANG WOOK ; CHOI, HO MIN ; KWON, HYEOK YONG ; JUNG, WOO DUCK ; OH, WAN SUK ; SHIN, SEUNG WOO ; CHO, SUNG KIL ; LEE, KOON WOO</creator><creatorcontrib>PARK, SEONG JIN ; KIM, KI HO ; LEE, KANG WOOK ; CHOI, HO MIN ; KWON, HYEOK YONG ; JUNG, WOO DUCK ; OH, WAN SUK ; SHIN, SEUNG WOO ; CHO, SUNG KIL ; LEE, KOON WOO</creatorcontrib><description>The present invention relates to a method to form a silicon film and, more specifically, relates to a method to form the silicon film including a pre-processing step in a process to form silicon film. According to an embodiment of the present invention, the method to form the silicon film includes: the pre-processing step dropping pre-processing gas including one or more elements among N, C, O, and B before a heat treatment when forming a polysilicon film by heat-treating an amorphous silicon film deposited on a base.</description><language>eng ; kor</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150330&DB=EPODOC&CC=KR&NR=101507381B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150330&DB=EPODOC&CC=KR&NR=101507381B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK, SEONG JIN</creatorcontrib><creatorcontrib>KIM, KI HO</creatorcontrib><creatorcontrib>LEE, KANG WOOK</creatorcontrib><creatorcontrib>CHOI, HO MIN</creatorcontrib><creatorcontrib>KWON, HYEOK YONG</creatorcontrib><creatorcontrib>JUNG, WOO DUCK</creatorcontrib><creatorcontrib>OH, WAN SUK</creatorcontrib><creatorcontrib>SHIN, SEUNG WOO</creatorcontrib><creatorcontrib>CHO, SUNG KIL</creatorcontrib><creatorcontrib>LEE, KOON WOO</creatorcontrib><title>METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM</title><description>The present invention relates to a method to form a silicon film and, more specifically, relates to a method to form the silicon film including a pre-processing step in a process to form silicon film. According to an embodiment of the present invention, the method to form the silicon film includes: the pre-processing step dropping pre-processing gas including one or more elements among N, C, O, and B before a heat treatment when forming a polysilicon film by heat-treating an amorphous silicon film deposited on a base.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3dQ3x8HdRcPMPAmFfTz93hQB_n0jnoMjgEEcfH08_V4VgTx9PZ38_BTdPH18eBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhLvHWRoYGhqYG5sYejkZGhMnCoAubInLw</recordid><startdate>20150330</startdate><enddate>20150330</enddate><creator>PARK, SEONG JIN</creator><creator>KIM, KI HO</creator><creator>LEE, KANG WOOK</creator><creator>CHOI, HO MIN</creator><creator>KWON, HYEOK YONG</creator><creator>JUNG, WOO DUCK</creator><creator>OH, WAN SUK</creator><creator>SHIN, SEUNG WOO</creator><creator>CHO, SUNG KIL</creator><creator>LEE, KOON WOO</creator><scope>EVB</scope></search><sort><creationdate>20150330</creationdate><title>METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM</title><author>PARK, SEONG JIN ; KIM, KI HO ; LEE, KANG WOOK ; CHOI, HO MIN ; KWON, HYEOK YONG ; JUNG, WOO DUCK ; OH, WAN SUK ; SHIN, SEUNG WOO ; CHO, SUNG KIL ; LEE, KOON WOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR101507381BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2015</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK, SEONG JIN</creatorcontrib><creatorcontrib>KIM, KI HO</creatorcontrib><creatorcontrib>LEE, KANG WOOK</creatorcontrib><creatorcontrib>CHOI, HO MIN</creatorcontrib><creatorcontrib>KWON, HYEOK YONG</creatorcontrib><creatorcontrib>JUNG, WOO DUCK</creatorcontrib><creatorcontrib>OH, WAN SUK</creatorcontrib><creatorcontrib>SHIN, SEUNG WOO</creatorcontrib><creatorcontrib>CHO, SUNG KIL</creatorcontrib><creatorcontrib>LEE, KOON WOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK, SEONG JIN</au><au>KIM, KI HO</au><au>LEE, KANG WOOK</au><au>CHOI, HO MIN</au><au>KWON, HYEOK YONG</au><au>JUNG, WOO DUCK</au><au>OH, WAN SUK</au><au>SHIN, SEUNG WOO</au><au>CHO, SUNG KIL</au><au>LEE, KOON WOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM</title><date>2015-03-30</date><risdate>2015</risdate><abstract>The present invention relates to a method to form a silicon film and, more specifically, relates to a method to form the silicon film including a pre-processing step in a process to form silicon film. According to an embodiment of the present invention, the method to form the silicon film includes: the pre-processing step dropping pre-processing gas including one or more elements among N, C, O, and B before a heat treatment when forming a polysilicon film by heat-treating an amorphous silicon film deposited on a base.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM |
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