METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM

The present invention relates to a method to form a silicon film and, more specifically, relates to a method to form the silicon film including a pre-processing step in a process to form silicon film. According to an embodiment of the present invention, the method to form the silicon film includes:...

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Bibliographische Detailangaben
Hauptverfasser:	PARK, SEONG JIN, KIM, KI HO, LEE, KANG WOOK, CHOI, HO MIN, KWON, HYEOK YONG, JUNG, WOO DUCK, OH, WAN SUK, SHIN, SEUNG WOO, CHO, SUNG KIL, LEE, KOON WOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a method to form a silicon film and, more specifically, relates to a method to form the silicon film including a pre-processing step in a process to form silicon film. According to an embodiment of the present invention, the method to form the silicon film includes: the pre-processing step dropping pre-processing gas including one or more elements among N, C, O, and B before a heat treatment when forming a polysilicon film by heat-treating an amorphous silicon film deposited on a base.