METHOD FOR MANUFACTURING ULTRATHIN SILICON SUBSTRATE

The present invention relates to a method for manufacturing an ultrathin silicon substrate by lifting off a portion in a certain thickness from a bulk silicon member comprising: a notch forming step and a plating step. In the notch forming step, a notch is formed by shooting, from the side of the bulk silicon member, a laser beam at a position which is a certain thickness away from a surface of the bulk silicon member. In the plating step, the surface of the bulk silicon member is plated with metal. The tensile stress of the metal layer destroys the bonding structure of the inner silicon member, thereby separating an ultrathin silicon substrate from the bulk silicon member from the notch parallel to the surface of the bulk silicon member.