PHASE SHIFT BLANK MASK AND PHOTOMASK

The present invention relates to a phase shift blank mask that includes a light blocking film and a phase shift film on a transparent substrate thereof. The light blocking film is made of a chrome-tin (Cr-Sn) compound including chrome (Cr) and tin (Sn) to make thickness of the light blocking film th...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	JEONG, SEE JUN, JANG, KYU JIN, KIM, CHANG JUN, SHIN, CHEOL, YANG, CHUL KYU, LEE, JONG HWA, KANG, GEUNG WON, NAM, KEE SOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention relates to a phase shift blank mask that includes a light blocking film and a phase shift film on a transparent substrate thereof. The light blocking film is made of a chrome-tin (Cr-Sn) compound including chrome (Cr) and tin (Sn) to make thickness of the light blocking film thin. According to the present invention, the phase shift film and the light blocking film can be formed to be thin; and the phase shift film and the light blocking film can be finely patterned by using a hard film. Therefore, a micro-pattern of 32 nm or less can be formed; and excellent accuracy of the pattern can be obtained.