A SINGLE CRYSTAL GROWER AND A METHOD OF DETECTING A GAS LEAK IN THE SAME

A SINGLE CRYSTAL GROWER AND A METHOD OF DETECTING A GAS LEAK IN THE SAME

An embodiment relates to a single crystal grower including a single crystal growing unit, a filter and a vacuum pump. The method of detecting leaking gas from a single grower comprises a step of setting a first vacuum level of each of the single crystal growing unit and the filter by the vacuum pump...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: HA, SE GEUN
Format: Patent
Sprache:eng ; kor
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:An embodiment relates to a single crystal grower including a single crystal growing unit, a filter and a vacuum pump. The method of detecting leaking gas from a single grower comprises a step of setting a first vacuum level of each of the single crystal growing unit and the filter by the vacuum pump; a step of blocking the gas flow between the single crystal growing unit and the filter, and between the filter and the vacuum pump; a step of measuring a second vacuum level of the filter at a first reference time, and detecting the gas leakage of the filter according to the measured result; and a step of measuring a second vacuum level of the single crystal growing unit at a second reference time, and determining the gas leakage of the single crystal growing unit according to the measured result.