HIGH POWER TRANSISTOR AND FABRICATION METHOD THEREOF

The present specification relates to a high power transistor having a high power property without reducing a frequency property, and a fabrication method thereof. According to one embodiment of the present specification, the high power transistor includes a substrate; a first and a second epi layer which are formed on a substrate and separated from each other; a first source electrode and a first drain electrode which are formed on the first epi layer; a first gate electrode which is formed between the first source electrode and the first drain electrode; a second source electrode and a second drain electrode which is formed on the second epi layer; and a second gate electrode which is formed between the second source and the second drain electrode.