OXIDE SPUTTERING TARGETS HAVING AN EXCELLENT STABILITY OF THE OXIDE THIN FILM TRANSISTORS AND THIN FILM TRANSISTOR USING THIS

PURPOSE: An oxide sputtering targets having the excellent stability of an oxide thin film transistor and a thin film transistor using the same are provided to reduce light sensitivity by reducing changes in the properties of a target. CONSTITUTION: A gate electrode (G1) is formed on a substrate. The...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, SEUNG YI, YOON, WON KYU, YANG, SEUNG HO, LIM, SUN KWON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PURPOSE: An oxide sputtering targets having the excellent stability of an oxide thin film transistor and a thin film transistor using the same are provided to reduce light sensitivity by reducing changes in the properties of a target. CONSTITUTION: A gate electrode (G1) is formed on a substrate. The gate electrode is made of an electrode material. The gate electrode is formed under a channel layer (A1). The channel layer is formed on a source electrode (S1) and a drain electrode (D1). A gate insulating layer is formed on the substrate. [Reference numerals] (A1) Channel layer; (B) Substrate; (D1) Drain electrode; (G1) Gate electrode; (GI1) Insulation layer; (P1) Protection layer; (S1) Source electrode