SUB-MOUNT SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF FABRICATING A SEMICONDUCTOR LIGHT EMITTING ELEMENT USING THE SAME

SUB-MOUNT SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF FABRICATING A SEMICONDUCTOR LIGHT EMITTING ELEMENT USING THE SAME

PURPOSE: A sub-mount substrate for a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device using the same are provided to secure mechanical stability by using a support substrate made of graphite or graphite composites. CONSTITUTION: A bonding layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: OH, BYUNG DU, LEE, WOO SIK, KU, KYO SUN, JEONG, UNG RAK, SHIN, HYUN WOO
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A sub-mount substrate for a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device using the same are provided to secure mechanical stability by using a support substrate made of graphite or graphite composites. CONSTITUTION: A bonding layer(105) for a sub mount substrate is formed on the second surface of a support substrate layer(104). A temporary support substrate layer(101) is placed on a sacrificial layer(102). The thickness of the temporary support substrate layer is 100-2000μm. The support substrate layer has a single layer or a laminated structure. The thickness of the support substrate layer is 100-2000μm.