NON VOLATILE MEMORY DEVICE CAPABLE OF REDUCING CONSUMPTION OF CURRENT AND METHOD OF DRIVING THE SAME

PURPOSE: A non-volatile memory apparatus and a driving method thereof are provided to reduce current consumption by omitting a high-voltage swing process for a non-selected bit line. CONSTITUTION: An even bit line and an odd bit line are connected to a page buffer. An even memory cell string and an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YOON, EUI SANG, PARK, YOUNG SOO, KIM, JAE YUN
Format: Patent
Sprache:eng ; kor
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Beschreibung
Zusammenfassung:PURPOSE: A non-volatile memory apparatus and a driving method thereof are provided to reduce current consumption by omitting a high-voltage swing process for a non-selected bit line. CONSTITUTION: An even bit line and an odd bit line are connected to a page buffer. An even memory cell string and an odd memory cell string are respectively installed on the even bit line and the odd bit line. A bit line selection part(120) selectively generates a signal reading path between the selected even or odd bit line and the even or odd memory cell string. A first path part(125) is connected between the even bit line and the even memory cell string. A second path part(135) is connected between the odd bit line and the odd memory cell string.