BIAS-T APPARATUS WITH HIGH CAPACITANCE

PURPOSE: A bias-T apparatus having high capacitance is provided to maximize the surface of conductors and to increase capacitance. CONSTITUTION: A second conductor(130) includes a second outer connection unit and a second internal connection unit. One side of the second outer connection unit is open...

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1. Verfasser: HEO, KWANG MYOUNG
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:PURPOSE: A bias-T apparatus having high capacitance is provided to maximize the surface of conductors and to increase capacitance. CONSTITUTION: A second conductor(130) includes a second outer connection unit and a second internal connection unit. One side of the second outer connection unit is opened. The second conductor is interconnected with a first conductor. A dielectric(140) is formed between the first and the second conductors.