METHOD FOR GROWING NITRIDE SEMICONDUCTOR FILM

A method for growing nitride semiconductor thin film capable of growing high quality thin film on sapphire substrate through simple process is provided to improve quality of a nitride thin film by reforming a surface of a sapphire substrate by an ion injection process. A physical property of a substrate is changed by injecting an ion(120) of a gas on a patterned sapphire substrate(100). At least one or more nitride semiconductor layer is formed on the substrate. An electrode is formed on the nitride semiconductor layer. A surface patterning of the sapphire substrate is performed with one method selected among a photo lithography method, an electron beam lithography method, an extreme ultraviolet ray interference lithography method, and a nano imprinting method.