METHOD OF FORMING CONTACT HOLE IN A SEMICONDUCTOR DEVICE

The method for forming contact hole of the semiconductor device is provided to improve the reliability of device by increasing the contact hole forming margin and preventing the damage of the sidewall when forming the contact hole. The method for forming contact hole of the semiconductor device comprises as follows. A step is for forming the select line on the semiconductor substrate(102). A step is for forming junction areas(114a,114b) in the exposed semiconductor substrate between select lines. A step is for forming the protective film(118) on the semiconductor substrate including select lines. A step is for stacking the first insulation layer(120) and second insulation layer(122) having a different etch selectivity on the protective film. A step is for becoming narrower the width of the first insulation layer and the second insulation layer.