METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
After etching the active area reserved area, the active area is grown by the SEG (Silicon Epitaxial Growth) method and the recess gate domain is formed. So, the generation of voids can be prevented when forming the element isolation film. The oxidation process is performed on the semiconductor subst...
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| Sprache: | eng |
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| Zusammenfassung: | After etching the active area reserved area, the active area is grown by the SEG (Silicon Epitaxial Growth) method and the recess gate domain is formed. So, the generation of voids can be prevented when forming the element isolation film. The oxidation process is performed on the semiconductor substrate(2) and the first oxide film(4) is formed. And the first nitride film(6) is deposited on the first oxide film. The dielectric material is deposited on the first nitride film. The active region reserved area(3) of the semiconductor board is exposed. The second nitride film(12) and the second oxide film(14) are laminated on the entire surface including the active region reserved area of the semiconductor substrate. The second oxide film and the second nitride film are left in the side wall of dielectric material. The active area is grown on the active area reserved area of the semiconductor board by the SEG (Silicon Epitaxial Growth) method. The active area is etched and the recess gate region(18) is formed. |
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