METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device is provided to adjust selectively a thickness of a pre-amorphized oxide layer in an etch process by discriminating a salicide region and a non-salicide region from each other in a salicidation process. A gate having a sidewall spacer is formed on a salicide region(11) of a semiconductor substrate(10) including the salicide region and a non-salicide region(12). A blocking oxide layer is deposited on the substrate. A photoresist is coated on the blocking oxide layer. A pattern is formed on the non-salicide region. The gate is exposed by etching the oxide layer of the salicide region. The photoresist is removed from the non-salicide region. A photoresist pattern is formed on the salicide region. A PAI(Pre-Amorphization Implant) process for the non-salicide region is performed. The photoresist is removed from the salicide region. A metal layer(23) is laminated on the semiconductor substrate. A silicide layer(25) s formed on the metal layer.