METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

A manufacturing method of a semiconductor device is provided to form a trench by etching a silicon substrate selectively, form a gate electrode on a protruded silicon substrate between trenches, and form a source/drain region on the lower part of both sides of the gate electrode, so that the process can be simplified. A trench having a uniform gap is formed by etching selectively an active area of a silicon substrate(101). A gate electrode(106) formed with the silicon substrate between the trenches is formed. A gate oxide layer is formed on the silicon substrate including the trench. An LDD(Lightly Doped Drain) area(108) is formed at the lower part of both sides of the gate electrode. An insulating layer sidewall(109) is formed at both sides of the gate electrode. A source/drain impurity area(110) is formed on the lower part of the trench. A metal silicide layer(111) is formed at the silicon substrate above the source/drain impurity region and the gate electrode.