WSI2-SIC NANOCOMPOSITE COATING AND MANUFACTURING METHOD THEREOF

A WSi2-SiC nanocomposite coating layer and a manufacturing method thereof are provided to improve anti-oxidation characteristic of the coating layer in the high temperature condition by preventing micro crack from being formed in the nanocomposite coating layer. A method for manufacturing a WSi2-SiC...

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Bibliographische Detailangaben
Hauptverfasser:	SON, KEUN HYUNG, LEE, KYUNG HWAN, KIM, GYEUNG HO, LEE, JONG KWON, HONG, KYUNG TAE, YOON, JIN KOOK, DOH, JUNG MANN, JI, YOUNG SU, KIM, HAN SUNG
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A WSi2-SiC nanocomposite coating layer and a manufacturing method thereof are provided to improve anti-oxidation characteristic of the coating layer in the high temperature condition by preventing micro crack from being formed in the nanocomposite coating layer. A method for manufacturing a WSi2-SiC nanocomposite coating layer comprises steps of vapor-depositing tungsten and carbon on the surface of tungsten or tungsten alloy to form a W2C coating layer, and vapor-depositing silicon on the surface of the W2C coating layer to form the WSi2-(17-19.3) vol.% SiC nanocomposite coating layer. The carbon is subject to chemical deposition using one selected from the group consisting of CO, CH4, C2H4 and CH2I2, and simultaneously the tungsten is subject to chemical deposition using WF6, WCl6 or W(CO)6. The silicon is subject to chemical deposition using SiCl4, SiH2Cl2, SiH3Cl or SiH4.