TRANSIENT VOLTAGE SUPPRESSOR AND INTEGRATED CIRCUIT USING THE SAME

TRANSIENT VOLTAGE SUPPRESSOR AND INTEGRATED CIRCUIT USING THE SAME

A transient voltage suppressor and an integrated circuit using the same are provided to reduce a capacitance composition by positioning a low-density epitaxial layer on a lateral part of a doping region. An epitaxial layer(120) is formed on a surface of a substrate(110). A doping region(130) is form...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, WEON CHAN, SONG, IN HYUK, KIM, IN SU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A transient voltage suppressor and an integrated circuit using the same are provided to reduce a capacitance composition by positioning a low-density epitaxial layer on a lateral part of a doping region. An epitaxial layer(120) is formed on a surface of a substrate(110). A doping region(130) is formed from a surface of the epitaxial layer to the surface of the substrate. An isolation region(140) is separated from a lateral surface of the doping region of the epitaxial layer. The isolation region is formed around the doping region. The isolation region comes in contact with the surface of the epitaxial layer and a top surface of the substrate. An insulating layer(150) is formed on a region including the surface of the epitaxial layer between the doping region and the isolation region. A first electrode(160) is formed on a surface of the isolation region. A second electrode(170) is formed on the surface of the doping region.