VOID-RESTRICTING STRUCTURE, SEMICONDUCTOR DEVICES HAVING THE VOID-RESTRICTING STRUCTURE AND METHODS OF FORMING THE SAME

A void-restricting structure, semiconductor devices having the void-restricting structure, and methods for forming the same are provided to enhance current supplying performance of semiconductor wires by using the void-restricting structures. A void-restricting structure includes a pair of wires(59), a void-restricting film(76), and an interlayer dielectric film(38). The wires, which are formed on a semiconductor substrate, include plugs and lines(53,56) to be stacked sequentially with different widths from one another. The void-restricting film restricts voids(79) between the wires and covers an upper surface of the wires. The interlayer dielectric film, which is located under the void-restricting film, surrounds the void-restricting film and wires.