METHOD FOR FORMING HIGH DIELECTRIC THIN LAYER

A method for forming a high-dielectric thin layer is provided to improve the reliability of the thin layer by forming the high-dielectric thin layer using an ammonia solution. A reactor container including a substrate is introduced with precursor comprising metal atoms to form an absorption layer comprising the metal atom on the substrate(S101,S102). The reactor container is introduced with an ammonia solution(NH4OH) to react the absorption layer comprising the metal atoms with NH4OH and then form a thin layer(S104). The metal is at least one selected from the group consisting of Hf, Zr, Al, Ta, Ti, Sr, La, Ba, Pb, Cr, Mo, W, Y and Mn.