IN-LINE TYPE THIN FILM MAKING METHOD AND THIN FILM MAKING APPARATUS

A thin film forming apparatus of an in-line type and a thin film forming method are provided to keep uniformly the thickness and characteristics of a thin film, to prevent the damage of a glass substrate or the thin film and to reduce the total processing time. A semiconductor or insulating material is changed into a plasma state on a substrate by applying a predetermined power source to the semiconductor or insulating material using a pre-deposition chamber. An ITO layer is deposited on the substrate in a coating chamber(4) by using ion plating in a predetermined temperature range of 300 °C or less. The semiconductor or insulating material is one selected from a group consisting of semiconductor or insulator. SiO2 is capable of being used as the semiconductor or insulating material. The ITO layer is coated on the substrate under a predetermined temperature condition of 30 to 300 °C.