HIGH BRIGHTNESS LED WITH PROTECTIVE FUNCTION OF ELECTROSTATIC DISCHARGE DAMAGE AND METHOD OF MANUFACTURING THE SAME

A high brightness LED and its manufacturing method are provided to prevent the damage of an LED chip by bypassing a reverse current generated due to electrostatic discharge using a parallel connection structure between the LED chip and an electrostatic discharge protecting element. A lead frame(50)...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TSUTSUI TSUYOSHI, RYU, YUNG HO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A high brightness LED and its manufacturing method are provided to prevent the damage of an LED chip by bypassing a reverse current generated due to electrostatic discharge using a parallel connection structure between the LED chip and an electrostatic discharge protecting element. A lead frame(50) is composed of an anode lead(51) and a cathode lead(52). A package(10) is used for holding partially the lead frame and exposing the entire upper surface of the lead frame and a portion of the lower surface to the outside. A fixing member(10a) is used for fixing the anode and cathode leads with each other as one piece. An LED chip(30) is mounted on the exposed upper surface of the lead frame. An electrostatic discharge protection element(40) is mounted on the exposed lower surface of the lead frame. The electrostatic discharge protection element and the LED chip are connected with each other in parallel through a wire. A first molding member(20) is used for protecting the LED chip. A second molding member(70) is used for protecting the electrostatic discharge protection element.