RECEIVER USING VERTICAL BIPOLAR JUNCTION TRANSISTOR WHICH IS EMBODIED IN DEEP N-WELL CMOS TECHNOLOGY

A receiver using a vertical BJT(Bipolar Junction Transistor) realized by a deep n-well CMOS(Complementary Metal Oxide Semiconductor) is provided to reduce I/f noise, consequently linearity is improved while mismatch between I(In-phase) and Q(Quadrature) channels is solved. An input unit(210) amplifi...

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Bibliographische Detailangaben
Hauptverfasser: LEE, KWY RO, LEE, JOON HEE, NAM, IL KU
Format: Patent
Sprache:eng
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Zusammenfassung:A receiver using a vertical BJT(Bipolar Junction Transistor) realized by a deep n-well CMOS(Complementary Metal Oxide Semiconductor) is provided to reduce I/f noise, consequently linearity is improved while mismatch between I(In-phase) and Q(Quadrature) channels is solved. An input unit(210) amplifies a small input signal so as to have little noise deterioration, and outputs an output signal. A converter(220) converts the output signal into the first and second differential signals without distortion, and outputs the converted signals. The first and second differential signals are cross-coupled together in a transmitter(230), and the cross-coupled signals are outputted from the transmitter(230). A mixer unit(240) consists of the first mixer stage(241) for mixing the first differential signal with I and Q local oscillation signals, and the second mixer stage(242) for mixing the second differential signal with the I and Q local oscillation signals.